MTB12N04J3 - Cystech Electonics

MTB12N04J3 N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C707J3 Issued Date : 2009.04.23 Revised Date : Page No. : 1/7 MTB12N04J3 Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) 40V 30A 12mΩ Equivalent Circuit MTB12N04J3 Outline TO-252 G：Gate D：.

Features

• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) 40V 30A 12mΩ Equivalent Circuit MTB12N04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current
*1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH
*2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operati.