MTB100A06KRH8 - CYStech

MTB100A06KRH8 Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C666H8 Issued Date : 2019.12.13 Revised Date : Page No. : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB100A06KRH8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  ESD protected gate  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC.

Features

 Low On Resistance
 Simple Drive Requirement
 Low Gate Charge
 Fast Switching Characteristic
 ESD protected gate
 Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.2A RDS(ON)@VGS=4.5V, ID=1.3A RDS(ON)@VGS=3.3V, ID=1A 60V 11.3A 7.1A 3.2A 2.6A 82mΩ(typ) 116mΩ(typ) 183mΩ(typ) Equivalent Circuit MTB100A06KRH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB100A06KRH8-0-T6-G MTB100A06KRH8 Package DFN 5 ×6 (Pb-free lead plating and halogen-free pack.