MTB100N10RKJ3 - Cystech Electonics

MTB100N10RKJ3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTB100N10RKJ3 Spec. No. : C059J3 Issued Date : 2016.09.01 Revised Date : Page No. : 1/9 Features • Low Gate Charge • Simple Drive Requirement • ESD protected gate • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 10.

Features

• Low Gate Charge
• Simple Drive Requirement
• ESD protected gate
• Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB100N10RKJ3-0-T3-G Package TO-252 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, .