Bi-Color LED Lamp Ar ray Arr FEA TURES FEATURES • • • • 10 segment bi-color LED Bar Graph Array Solid state reliability Hi-efficiency red and green Grey surface/white epoxy OPT O-ELECTRICAL CHARA CTERISTICS (T a = 25°C) OPTO-ELECTRICAL CHARACTERISTICS (Ta MAXIMUM RATINGS PART NO. EMITTED COLOR PEAK WAVE LENGTH (nm) PD (mW) 85 85 OPTO ELECTRICAL CHARACTERIST.
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• 10 segment bi-color LED Bar Graph Array Solid state reliability Hi-efficiency red and green Grey surface/white epoxy
OPT O-ELECTRICAL CHARA CTERISTICS (T a = 25°C) OPTO-ELECTRICAL CHARACTERISTICS (Ta
MAXIMUM RATINGS PART NO. EMITTED COLOR PEAK WAVE LENGTH (nm) PD (mW) 85 85 OPTO ELECTRICAL CHARACTERISTICS VF(V) typ. 2.1 2.1 max. 3.0 3.0 @mA 20 20 IR(µA) max. 100 100 @VR 5 5 IV(µcd) typ.per seg. 3900 3400 @mA 10 10 1 1 Pin-Out IF(mA) VR(V)
MTB10062-HRG
(HR) (G)
Hi-Eff Red Green
635 567
30 30
5 5
PACKA GE DIMENSIONS AND PIN FUNCTIONS CKAGE
PINOUT 1
PIN NO. FUNCTION 1. 2. 3. 4. 5..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTB10000 |
Marktech Corporate |
LED Lamp Arrays | |
2 | MTB10010U |
NXP |
NPN microwave power transistor | |
3 | MTB100A06KRH8 |
CYStech |
Dual N-Channel Enhancement Mode Power MOSFET | |
4 | MTB100A10KRH8 |
Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET | |
5 | MTB100A10KRQ8 |
Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET | |
6 | MTB100N10RKJ3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
7 | MTB10N40E |
Motorola |
TMOS POWER FET | |
8 | MTB110P08KJ3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
9 | MTB110P08KN3 |
Cystech Electonics |
P-Channel Enhancement Mode MOSFET | |
10 | MTB110P08KN6 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
11 | MTB115P10KJ3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET | |
12 | MTB11N03BQ8 |
CYStech Electronics |
N-Channel Logic Level Enhancement Mode Power MOSFET |