MTB115P10KJ3 - Cystech Electonics

MTB115P10KJ3 P-Channel Enhancement Mode Power MOSFET

Spec. No. : C891J3 CYStech Electronics Corp. Issued Date : 2016.12.23 Revised Date : P-Channel Enhancement Mode Power MOSFET MTB115P10KJ3 Features • Low Gate Charge • Simple Drive Requirement • ESD Protected Gate • Pb-free Lead Plating & Halogen-free Package BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-4.5V, ID=-8A -100V -15A 82mΩ(.

Features

• Low Gate Charge
• Simple Drive Requirement
• ESD Protected Gate
• Pb-free Lead Plating & Halogen-free Package BVDSS ID@VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-4.5V, ID=-8A -100V -15A 82mΩ(typ) 107mΩ(typ) Equivalent Circuit MTB115P10KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB115P10KJ3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tap.