CYStech Electronics Corp. Spec. No. : C053E3 Issued Date : 2019.08.29 Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB020N10RE3 Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A R.
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=15A
100V 33A
6.6A 21.3mΩ(typ) 26.5 mΩ(typ)
Symbol
MTB020N10RE3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device
Package
Shipping
MTB020N10RE3-0-UB-X
TO-220 (Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTB020N10RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTB020N03E3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTB020N03KJ3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTB020N03KL3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
5 | MTB020N03KM3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
6 | MTB020N03KN3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
7 | MTB020N03KN6 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
8 | MTB020N03KQ8 |
Cystech Electonics |
N-Channel Enhancement Mode MOSFET | |
9 | MTB020N03KV8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
10 | MTB020N03V8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
11 | MTB020N06KE3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
12 | MTB020N06KH8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET |