CYStech Electronics Corp. Spec. No. : C737E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB020N03E3 BVDSS ID@VGS=10V, TC=25°C Features RDS(ON)@VGS=10V, ID=20A • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS .
RDS(ON)@VGS=10V, ID=20A
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
30V 34A
18mΩ (typ)
Symbol
MTB020N03E3
Outline
TO-220
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTB020N03E3-0-UB-X
Package
Shipping
TO-220 (Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTB020N03KJ3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTB020N03KL3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
3 | MTB020N03KM3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
4 | MTB020N03KN3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
5 | MTB020N03KN6 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
6 | MTB020N03KQ8 |
Cystech Electonics |
N-Channel Enhancement Mode MOSFET | |
7 | MTB020N03KV8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
8 | MTB020N03V8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
9 | MTB020N06KE3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
10 | MTB020N06KH8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
11 | MTB020N10RE3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET | |
12 | MTB020N10RH8 |
CYStech |
N-Channel Enhancement Mode Power MOSFET |