MTB020N06KH8 - Cystech Electonics

MTB020N06KH8 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C103H8 Issued Date : 2016.04.20 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTB020N06KH8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD protected gate • Pb.

Features

• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate
• Pb-free lead plating and Halogen-free package RDS(ON)@VGS=4.5V, ID=6A RDS(ON)@VGS=4V, ID=4A 60V 42A 7.8A 12.2mΩ(typ) 15.6mΩ(typ) 17.6mΩ(typ) Symbol MTB020N06KH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTB020N06KH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing sp.