MTB020N06KE3 - CYStech

MTB020N06KE3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C103E3 Issued Date : 2017.02.14 Revised Date : 2017.04.05 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB020N06KE3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C Features RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Char.

Features

RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate
• RoHS compliant package 60V 41A 8.4A 12.7 mΩ(typ) 17.8 mΩ(typ) Symbol MTB020N06KE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB020N6KE3-0-UB-X Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Prod.