CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C442J3 Issued Date : 2009.03.02 Revised Date : Page No. : 1/7 MTA06N03NJ3 Features BVDSS ID RDS(ON) 25V 80A 6mΩ • 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Ro.
BVDSS ID RDS(ON)
25V 80A 6mΩ
• 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
MTA06N03NJ3
Outline
TO-252
G:Gate D:Drain S:Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=53A, RG=25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTA06N03J3 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
2 | MTA001M |
Shindengen Electric |
High Output Interface Driver ICs | |
3 | MTA002 |
Shindengen Electric |
High Output Interface Driver ICs | |
4 | MTA010N01SN3 |
Cystech Electonics |
14V N-Channel Enhancement Mode MOSFET | |
5 | MTA011 |
Shindengen Electric |
High Output Interface Driver ICs | |
6 | MTA012A02CDV8 |
Cystech Electonics |
Common Drain Dual N-Channel Enhancement Mode MOSFET | |
7 | MTA020A01Q8 |
Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET | |
8 | MTA020N01S3 |
Cystech Electonics |
14V N-Channel Enhancement Mode MOSFET | |
9 | MTA020N01SN3 |
Cystech Electonics |
14V N-Channel Enhancement Mode MOSFET | |
10 | MTA025B01V8 |
Cystech Electonics |
Dual P-Channel Enhancement Mode MOSFET | |
11 | MTA025N03Q8 |
Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET | |
12 | MTA025P01N6 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |