MTA012A02CDV8 - Cystech Electonics

MTA012A02CDV8 Common Drain Dual N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp. Spec. No. : C779V8 Issued Date : 2016.12.19 Revised Date : Page No. : 1/9 Common Drain Dual N -Channel Enhancement Mode MOSFET MTA012A02CDV8 BVDSS ID VGS=4.5V, TA=25°C VGS=4.5V, ID=5A RDSON (TYP.) VGS=2.5V, ID=2.6A Features VGS=1.8V, ID=1A • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching spe.

Features

VGS=1.8V, ID=1A
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• ESD protected gate
• Pb-free lead plating and halogen-free package 20V 9A 12.0 mΩ 16.2 mΩ 32.1 mΩ Equivalent Circuit MTA012A02CDV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTA012A02CDV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Pro.