MTA025P01N6 - Cystech Electonics

MTA025P01N6 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C089N6 Issued Date : 2015.11.23 Revised Date : 2016.03.18 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTA025P01N6 BVDSS ID@VGS=-4.5V, TC=25°C ID@VGS=-4.5V, TA=25°C VGS=-4.5V, ID=-4.5A RDSON(TYP) VGS=-2.5V, ID=-2.2A VGS=-1.8V, ID=-2.2A -14V -7.1A -6.0A 22.5mΩ 30.3mΩ 49.0mΩ Features • Simple drive requ.

Features

• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free lead plating and halogen-free package Equivalent Circuit MTA025P01N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-4.5V Continuous Drain Current TC=70 °C, VGS=-4.5V TA=25 °C, VGS=-4.5V (Note 1) TA=70 °C, VGS=-4.5V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Operating Junction Temperature and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj.