MTA06N03J3 - Cystech Electonics

MTA06N03J3 N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C442J3 Issued Date : 2009.03.06 Revised Date : Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET MTA06N03J3 BVDSS ID RDS(ON) 25V 80A 6mΩ Features • 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoH.

Features

• 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package Symbol MTA06N03J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy@ L=0.05mH (Not.