MTA028P01V8 - CYStech Electronics

MTA028P01V8 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTA028P01V8 Spec. No. : C101V8 Issued Date : 2018.08.16 Revised Date : 2018.08.17 Page No. : 1/10 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-4.5V ID@ TA=25C, VGS=-4.5V RDSON @VGS=-4.5V, ID=-10A RDSON.

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-4.5V ID@ TA=25C, VGS=-4.5V RDSON @VGS=-4.5V, ID=-10A RDSON @VGS=-2.5V, ID=-7A RDSON @VGS=-1.8V, ID=-5A -14V -20.8A -6.5A 22mΩ(typ.) 28mΩ(typ.) 38 mΩ(typ.) Equivalent Circuit MTA028P01V8 Outline DFN3×3 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTA028P01V8-0-T6-G Package Shipping DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gr.