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MTA025P01N6 |
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| Part Number | MTA025P01N6 |
| Manufacturer | Cystech Electonics |
| Description | CYStech Electronics Corp. Spec. No. : C089N6 Issued Date : 2015.11.23 Revised Date : 2016.03.18 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTA025P01N6 BVDSS ID@VGS=-4.5V, TC=25°C ID@V... |
| Features |
• Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package Equivalent Circuit MTA025P01N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-4.5V Continuous Drain Current TC=70 °C, VGS=-4.5V TA=25 °C, VGS=-4.5V (Note 1) TA=70 °C, VGS=-4.5V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Operating Junction Temperature and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj... |
| Document |
 MTA025P01N6 Data Sheet
PDF 400.50KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MTA025P01SN3 |
Cystech Electonics |
P-Channel Enhancement Mode MOSFET |
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| 2 | MTA025P02Q8 |
CYStech Electronics |
P-Channel Enhancement Mode Power MOSFET |
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| 3 | MTA025B01V8 |
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Dual P-Channel Enhancement Mode MOSFET |
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| 4 | MTA025N03Q8 |
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N-Channel Enhancement Mode Power MOSFET |
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| 5 | MTA020A01Q8 |
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Dual N-Channel Enhancement Mode Power MOSFET |
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