MTA025P01SN3 - Cystech Electonics

MTA025P01SN3 P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp. Spec. No. : C089N3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/9 -14V P-Channel Enhancement Mode MOSFET MTA025P01SN3 BVDSS ID @ VGS=-4.5V, TA=25°C RDSON@VGS=-4.5V, ID=-4A RDSON@VGS=-2.5V,ID=-4A RDSON@VGS=-1.8V,ID=-2A Features • Low gate charge • Compact and low profile SOT-23 package • Advanced trench process technology •.

Features

• Low gate charge
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Pb-free lead plating package -14V -5.6A 25.5mΩ(typ) 35.5mΩ(typ) 52.0mΩ(typ) Symbol MTA025P01SN3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTA025P01SN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7.