The MT5C6408 is organized as a 8,192 x 8 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process..
• High speed: 9, 10, 12, 15,20 and 25ns
• High-performance, low-power, CMOS double-metal
process
• Single +5V ±10% power supply
• Easy memory expansion with CEl, CE2 and OE
options
• All inputs and outputs are TTL-compatible
OPTIONS
• Timing
9ns access IOns access 12ns access 15ns access 20ns access 25ns access
MARKING
-9 -10 -12 -15 -20 -25
• Packages Plastic DIP (300 mil) Plastic SOJ (300 mil)
• 2V data retention
None DJ
L
• Temperature Commercial (O°C to +70°C) Industrial (-40°C to +85°C) Automotive (-40°C to +125°C) Extended (-55°C to +125°C)
None IT AT XT
• Part Number Example: MT5.
No. 108 No. 204 No. 302 The MT5C6408, 8K x 8 SRAM, employs high-speed, low-power CMOS technology, eliminating the need f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT5C6401 |
Micron Technology |
64K x 1 SRAM | |
2 | MT5C6401 |
Austin Semiconductor |
64K x 1 SRAM SRAM MEMORY ARRAY | |
3 | MT5C6404 |
ASI |
16K x 4 SRAM SRAM MEMORY ARRAY | |
4 | MT5C6404 |
Micron |
16K x 4 SRAM | |
5 | MT5C6405 |
ASI |
16K x 4 SRAM SRAM MEMORY ARRAY | |
6 | MT5C6405 |
Micron |
16K x 4 SRAM | |
7 | MT5C64K16A1 |
Micron |
64K x 16 SRAM | |
8 | MT5C64K16A13A |
Micron Technology |
1M SRAM | |
9 | MT5C1001 |
ASI |
SRAM | |
10 | MT5C1001 |
Micross |
1M x 1 SRAM | |
11 | MT5C1001 |
Micron |
1 Meg x 1 SRAM | |
12 | MT5C1005 |
ASI |
SRAM MEMORY ARRAY |