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The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) on all organizations. This enhancement can.
• Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE
• All inputs and outputs are TTL compatible
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE) on all organi.
MT5C6404 - Micron
SRAM 16Kx4 SRAM FEATURES • High speed: 9, 10, 12, 15,20 and 25ns • High-performance, low-power, CMOS double-metal proc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT5C6401 |
Micron Technology |
64K x 1 SRAM |
|
| 2 | MT5C6401 |
Austin Semiconductor |
64K x 1 SRAM SRAM MEMORY ARRAY |
|
| 3 | MT5C6405 |
ASI |
16K x 4 SRAM SRAM MEMORY ARRAY |
|
| 4 | MT5C6405 |
Micron |
16K x 4 SRAM |
|
| 5 | MT5C6408 |
ASI |
8K x 8 SRAM |
|
| 6 | MT5C6408 |
Micron |
8K x 8 SRAM |
|
| 7 | MT5C64K16A1 |
Micron |
64K x 16 SRAM |
|
| 8 | MT5C64K16A13A |
Micron Technology |
1M SRAM |
|
| 9 | MT5C1001 |
ASI |
SRAM |
|
| 10 | MT5C1001 |
Micross |
1M x 1 SRAM |
|
| 11 | MT5C1001 |
Micron |
1 Meg x 1 SRAM |
|
| 12 | MT5C1005 |
ASI |
SRAM MEMORY ARRAY |
|