MT5C6401 64K x 1 SRAM Datasheet

MT5C6401 64K x 1 SRAM

The MT5C6401 is organized as a 65,556 x 1 SRAM using a four-transistor memory cell with a high-speed, low-power CMOS process. Micron SRAMs are fabricated using doublelayer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Micron offers chip enable (/C/E) with all organizations. This enhancement can place the outpu.

Features

• High speed: 9, 10, 12, 15, 20 and 25ns
• High-performance, low-power, CMOS double-metal process
• Single +5V ±10% power supply
• Easy memory expansion with /C/E option
• All inputs and outputs are TTL-compatible 64K x 1 SRAM PIN ASSIGNMENT (Top View) 22-Pin DIP (SA-2) A0 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 Vcc A15 A14 A13 A12 A11 A10 A9 A8 D CE OPTIONS
• Timing 9ns access 10ns access 12ns access 15ns access 20ns access 25ns access
• Packages Plastic DIP (300 mil) Plastic SOJ (300 mil)
• 2V data retention
• Temperature Commercial Industrial Automotive Extended MARKING .

The same part from a different manufacturer

MT5C6401 - Austin Semiconductor

The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Aus.

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MT5C6401 - Micron Technology