MT46H16M16LF Micron Technology Mobile Low-Power DDR SDRAM Datasheet, en stock, prix

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MT46H16M16LF

Micron Technology
MT46H16M16LF
MT46H16M16LF MT46H16M16LF
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Part Number MT46H16M16LF
Manufacturer Micron Technology
Description of products still under development. PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H16M16.fm - Rev. A 03/05 EN 2 Micron Technology, Inc., reserves the right to change products or specification...
Features
• VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data
  –one mask per byte
• Programmable burst lengths: 2, 4, 8, 16 or full page
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LV...

Document Datasheet MT46H16M16LF Data Sheet
PDF 3.14MB
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