MT3S12FS - Toshiba Semiconductor

MT3S12FS Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12FS VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications MT3S12FS Unit : mm 0.2±0.05 0.6±0.05 0.35±0.05 0.15±0.05 • Superior performance in oscillator applications • Superior noise characteristics :NF = 1.7 dB, |S21e|2 = 4.5 dB (f =2GHz) 1 3 2 0.8±0.05 1.0±0.05 0..

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product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board. Marking 2 3 09 1 1 2007-11-01 Microwave Characteristics (Ta = 25°C) Characteristic Tr.