TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features • Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) • High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 0.166±0.05 0.7±0.05 Marking 3 R5 1 2 .
• Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz)
• High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz)
2.0±0.1 0.65±0.05
2.1±0.1 1.7±0.1
Unit: mm
0.3-+00..015
1
2
3
0.166±0.05
0.7±0.05
Marking
3
R5
1
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
1. BASE 2. EMITTER 3. COLLECTOR
UFM
JEDEC
-
JEITA
-
TOSHIBA
2-2U1B
Weight: 6.6 mg (typ.)
Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range
VCES
13
V
VCEO
6
V
VEBO
0.6.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT3S111 |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
2 | MT3S111P |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
3 | MT3S113 |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
4 | MT3S113P |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
5 | MT3S113TU |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
6 | MT3S11FS |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor | |
7 | MT3S11T |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor | |
8 | MT3S106FS |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
9 | MT3S107FS |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
10 | MT3S108FS |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor | |
11 | MT3S12FS |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor | |
12 | MT3S12T |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |