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TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications MT3S113 Unit: mm FEATURES • Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz) • High Gain:|S21e|2=11.8dB (typ.) (@ f=1GHz) Marking R7 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbo.
• Low Noise Figure:NF=1.15dB (typ.) (@ f=1GHz)
• High Gain:|S21e|2=11.8dB (typ.) (@ f=1GHz)
Marking
R7
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
S-Mini
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range
VCES
13
V
VCEO
5.3
V
VEBO
0.6
V
IC
100
mA
IB
10
mA
PC(Note1)
800
mW
Tj
150
°C
Tstg
−55 to 150
°C
Note1.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT3S111 |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 2 | MT3S111P |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 3 | MT3S111TU |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 4 | MT3S113P |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 5 | MT3S113TU |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 6 | MT3S11FS |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |
|
| 7 | MT3S11T |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |
|
| 8 | MT3S106FS |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 9 | MT3S107FS |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 10 | MT3S108FS |
Toshiba Semiconductor |
Silicon-Germanium NPN Epitaxial Planar Type Transistor |
|
| 11 | MT3S12FS |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |
|
| 12 | MT3S12T |
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor |
|