MT3S113TU - Toshiba Semiconductor

MT3S113TU Silicon-Germanium NPN Epitaxial Planar Type Transistor

MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz) • High Gain:|S21e|2 = 12.5dB (typ.) (@ f=1GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 R7 1..

Features

• Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
• High Gain:|S21e|2 = 12.5dB (typ.) (@ f=1GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 R7 1.1. Base 2.2. Emitter 3.3. Collector 1 2 Absolute Maximum Ratings (Ta = 25°C) UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight : 6.6mg (typ.) Characteristics Symbol Rating Unit Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 5.3 V VEB.