MSC82302 - STMicroelectronics

MSC82302 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

The MSC82302 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overlay die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82302 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz frequency range. ABSOLUTE MAXIMUM RATING.

Features

ATA RTH(j-c) Junction-Case Thermal Resistance
* 25 °C/W
*Applies only to rated RF amplifier operation October 1992 1/4 MSC82302 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 22V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω IC = 100mA 44 3.5 44 — 30 — — — — — — — — 0.5 300 V V V mA — Test Conditions Value Min. Typ. Max. Unit POUT ηc GP COB f = 2.3 GHz f = 2.3 GHz f = 2.3 GHz f = 1 MHz PIN = 0.18 W PIN = 0.18 W PIN = 0.18 W VCB = 22 V VCC = 22 V VCC = 22 V VCC.