MSC8205G - MORESEMI

MSC8205G Dual N-Channel Enhancement Mode Power MOS FET

MSC8205G 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Lead Free Application ●Battery protection ●Load switch ●Power management PIN Configuration Marking and.

Features

● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Lead Free Application
●Battery protection
●Load switch
●Power management PIN Configuration Marking and pin assignment TSSOP-8 top view D1 G1 G2 D2 S1 S2 Schematic diagram Package Marking And Ordering Information Device Marking Device Device Package MSC8205G TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Vo.