MSC82040 - STMicroelectronics

MSC82040 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

The MSC82040 is a hermetically sealed NPN power transistor with a fishbone, emitter finger ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parame.

Features

THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
* 20 °C/W
*Applies only to rated RF amplifier operation October 1992 1/6 MSC82040 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V IE = 0mA IC = 0mA IB = 0mA IC = 100mA 45 3.5 20 — 15 — — — — — — — — 0.5 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit G P
* ∆ GP
* COB
* Note: f = 1.0 GHz f = 1.0 GHz f = 1 MHz POUT = 27 dBm POUT = 27 dBm VCB = 28 V ∆POUT = 10 dB 10.5 — — 11.5 —.