MSC80917 - Advanced Semiconductor

MSC80917 NPN SILICON RF MICROWAVE TRANSISTOR

The ASI MSC80917 is low level Class-C, Common Base Device Designed for IFF, DME driver Applications. PACKAGE STYLE .280 2L FL (B) 2 3 1 FEATURES INCLUDE: • Omnigold™ Metalization System • POUT 4.0 W Min. • GP = 10 dB MAXIMUM RATINGS IC www.DataSheet4U.com 1.0 A 37 V 7.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 35 °C/W 1 = COLLECTOR 2 = BASE 3.

Features

INCLUDE:
• Omnigold™ Metalization System
• POUT 4.0 W Min.
• GP = 10 dB MAXIMUM RATINGS IC www.DataSheet4U.com 1.0 A 37 V 7.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 35 °C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER VCE PDISS TJ TSTG θJC CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICES hFE GP POUT η TC = 25 °C TEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 35 V VCE = 5.0 V VCE = 35 V IC = 100 mA f = 1025 to 1150 MHz DUTY CYCLE = 1.0% MINIMUM TYPICAL MAXIMUM 45 20 3.5 1.0 20 10 4.0 35 120 UNITS V V V mA PIN = 400 mW PULSE WIDTH = 10 µS dB W % A D V A N C E D S E M I C O .