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The MSC80195 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Baser 4. Emitter P.
W
*Applies only to rated RF amplifier operation
October 1992
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MSC80195
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVEBO BVCEO ICEO hFE DYNAMIC
Symbol
IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V
IE = 0mA IC = 0mA IB = 0mA IC = 100mA
50 3.5 20 — 15
— — — — —
— — — 0.5 120
V V V mA —
Test Conditions
Value Min. Typ. Max.
Unit
G P
* ∆ GP
* COB
* Note:
f = 2.0 GHz f = 2.0 GHz f = 1 MHz
POUT = 28 dBm POUT = 28 dBm VCB = 28 V ∆POUT = 10 dB
— 7.5 —
— 8.5 —
1 — 3.0
dB dB pF
IC = 140mA
VCE = 18 V
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MSC80195
TYPIC.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSC80196 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
|
| 2 | MSC80197 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
|
| 3 | MSC80183 |
Advanced Semiconductor |
NPN RF TRANSISTOR |
|
| 4 | MSC80185 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
|
| 5 | MSC80186 |
STMicroelectronics |
GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
|
| 6 | MSC8001 |
Advanced Semiconductor |
High Power GaAs FET |
|
| 7 | MSC8004 |
Advanced Semiconductor |
HIGH POWER GaAs FET |
|
| 8 | MSC80064 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
|
| 9 | MSC80213 |
Advanced Semiconductor |
NPN RF TRANSISTOR |
|
| 10 | MSC80278 |
Advanced Semiconductor |
NPN RF TRANSISTOR |
|
| 11 | MSC80914 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 12 | MSC80915 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|