MSC80197 - STMicroelectronics

MSC80197 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

The MSC80197 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter PD.

Features

C/W
*Applies only to rated RF amplifier operation October 1992 1/6 MSC80197 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICEO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCE = 18V VCE = 5V IE = 0mA IC = 0mA IB = 0mA IC = 500mA 50 3.5 20 — 15 — — — — — — — — 1.0 120 V V V mA — Test Conditions Value Min. Typ. Max. Unit G P
* ∆ GP
* COB
* Note: f = 2.0 GHz f = 2.0 GHz f = 1 MHz POUT = 31.7 dBm POUT = 31.7 dBm VCB = 28 V ∆POUT = 10 dB 6.0 — — 7.0 — — — 1 7.0 dB dB pF IC = 360 mA VCE = 18 V 2/6 MSC8019.