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The MSC80064 is a hermetically sealed NPN power transistor specifically designed for Class A linear applications requiring high gain and high output power at the 1.0 dB compression point. www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS IC VCE TJ T STG Parameter Power Dissipation (see Safe Area) Device Bias Current Collector-Suppl.
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• 2.0 GHz CLASS A LINEAR OPERATION 20:1 VSWR CAPABILITY @ RATED CONDITIONS POUT = 20.5 dBm MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MSC80064 is a hermetically sealed NPN power transistor specifically designed for Class A linear applications requiring high gain and high output power at the 1.0 dB compression point.
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
PDISS IC VCE TJ T STG
Parameter
Power Dissipation (see Safe Area) Device Bias Current Collector-Supply Bias Voltage
* Junction Temperature Storage Temperature
Value
--100 20 200 - 65 to +200
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSC8001 |
Advanced Semiconductor |
High Power GaAs FET |
|
| 2 | MSC8004 |
Advanced Semiconductor |
HIGH POWER GaAs FET |
|
| 3 | MSC80183 |
Advanced Semiconductor |
NPN RF TRANSISTOR |
|
| 4 | MSC80185 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
|
| 5 | MSC80186 |
STMicroelectronics |
GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
|
| 6 | MSC80195 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
|
| 7 | MSC80196 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
|
| 8 | MSC80197 |
STMicroelectronics |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS |
|
| 9 | MSC80213 |
Advanced Semiconductor |
NPN RF TRANSISTOR |
|
| 10 | MSC80278 |
Advanced Semiconductor |
NPN RF TRANSISTOR |
|
| 11 | MSC80914 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 12 | MSC80915 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|