MSC060SMA070SA - Microchip

MSC060SMA070SA SiC N-Channel Power MOSFET

MSC060SMA070SA 700 V 60 mΩ SiC N-Channel Power MOSFET Product Overview The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070SA device is a 700 V, 60 mΩ SiC MOSFET in a TO-263 7-lead p.

Features

The following are key features of the MSC060SMA070SA device:
• Low capacitances and low gate charge
• Fast switching speed due to low internal gate resistance (ESR)
• Stable operation at high junction temperature, TJ(max) = 175 °C
• Fast and reliable body diode
• Superior avalanche ruggedness
• RoHS compliant Benefits The following are benefits of the MSC060SMA070SA device:
• High efficiency to enable lighter, more compact system
• Simple to drive and easy to parallel
• Improved thermal capabilities and lower switching losses
• Eliminates the need for external freewheeling diode
• Lower system.