MSC060SMA070B - Microsemi

MSC060SMA070B Silicon Carbide N-Channel Power MOSFET

MSC060SMA070B Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC060SMA070B device is a 700 V, 60 mΩ SiC MOSFET in a TO-247 packa.

Features

The following are key features of the MSC060SMA070B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 1.2 Benefits The following are benefits of the MSC060SMA070B device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of owner.