MSC0605W - MORESEMI

MSC0605W Dual N-Channel MOSFET

MSC0605W 60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Application ● Power switching application ● Hard switched and high.

Features

● VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ）
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Low gate to drain charge to reduce switching losses Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply Lead Free PIN Configuration Marking and pin assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0605W MSC0605W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Max.