Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX. 500 500 +/-20 +/-30 11 8 44 11 30 tbd 5.0 300 -55 to +150 -55 to +150 11 44 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts °C °C Amps Amps °C/W Drain-to-Gate Breakdown Volt.
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High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request
Maximum Ratings @ 25° C (unless otherwise specified)
DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC
DRAIN
MAX. 500 500 +/-20 +/-30 11 8 44 11 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSAFX10N90A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | MSAFX20N60A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | MSAFX24N50A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | MSAFX40N30A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | MSAFX50N20A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | MSAFX75N10A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | MSAFX76N07A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
8 | MSAFA1N100D |
Microsemi Corporation |
Fast MOSFET Die | |
9 | MSAFA1N100P3 |
Microsemi Corporation |
MOSFET Device | |
10 | MSAFA75N10C |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
11 | MSAFR12N50A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
12 | MSAFR30N20A |
Microsemi Corporation |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |