MSAFA1N100D - Microsemi Corporation

MSAFA1N100D Fast MOSFET Die

• • • N-Channel enhancement mode high density MOSFET die Passivation: oxynitride, 4um Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical. Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach Low On-state resistance Avalanche and Surge Rated High Freq. Switching Ultra Low Leakage Current UIS rated Available .

Features

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• MAXIMUM RATINGS: SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS T J, T STG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25° C Continuous Drain Current @ TC = 100° C Pulsed Drain Current ¬ @ T C = 25° C Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Operating and Storage: Junction Temperature Range VALUE 1000 ±20 1 .8 4 1 TBD TBD -55 to 150 UNIT Volts Volts Amps Amps Amps Amps mJ mJ °C STATIC ELECTRICAL CHARACTERISTICS: SYMBO L BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 I.