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MSAFA75N10C - Microsemi Corporation

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MSAFA75N10C N-CHANNEL ENHANCEMENT MODE POWER MOSFET

New generation N-channel enhancement mode power MOSFET with rugged polysilicon gate structure and fast switching intrinsic rectifier. The TM very rugged Coolpack2 surface-mount package is lightweight, space saving and hermetically sealed for high reliability and/or military/space application. • • • • • • IMPORTANT: For the most current data, consult MICRO.

Features

Ultrafast body diode Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Very low package inductance Very low thermal resistance Reverse polarity available upon request W W W . Microsemi . COM APPLICATIONS/BENEFITS APPLICATIONS/BENEFIT S
• DC-DC converters
• Motor controls
• Uninterruptible Power Supply(UPS)
• DC choppers
• Synchronous rectification
• Inverters MAXIMUM RATINGS @ 25°C (unless otherwise specified) Description Drain-to-Source Voltage (Gate Shorted to Source) Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage.

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