MSAFA1N100P3 - Microsemi Corporation

MSAFA1N100P3 MOSFET Device

Santa Ana Division www.DataSheet4U.com MSAFA1N100P3 MOSFET Device Features • • • • • • • • Low On-State resistance Avalanche and Surge Rated High Frequency Switching Ultra low Leakage Current UIS rated Available with Lot Acceptance Testing “L” Suffix Available with “J” leads 1 Amp 1000 V N-Channel enhancement mode high density Applications Implantable Ca.

Features

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• Low On-State resistance Avalanche and Surge Rated High Frequency Switching Ultra low Leakage Current UIS rated Available with Lot Acceptance Testing “L” Suffix Available with “J” leads 1 Amp 1000 V N-Channel enhancement mode high density Applications Implantable Cardio Defibrillator Testing and Screening (per lot)
• 100% Testing at 25C, DC parameters
• Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits) Maximum Ratings SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS TJ, TSTG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25 Contin.