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The MS1406 is a silicon NPN transistor designed for 12.5V AM Class C amplifiers operating in the 118–136 MHz aviation band and for 28V FM Class C amplifiers used in ground station transmitters. Diffused emitter ballast and gold metalization provide maximum ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T.
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• 175MHz 12.5 VOLTS GOLD METALIZATION Pout = 20WATTS Gp = 8.0 dB MINIMUM COMMON EMITTER CONFIGURATION
DESCRIPTION:
The MS1406 is a silicon NPN transistor designed for 12.5V AM Class C amplifiers operating in the 118
–136 MHz aviation band and for 28V FM Class C amplifiers used in ground station transmitters. Diffused emitter ballast and gold metalization provide maximum ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCBO VCEO VEBO IC PD Tj T STG
Parameter
Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MS1401 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|
| 2 | MS1401 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS |
|
| 3 | MS1402 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|
| 4 | MS1403 |
Microsemi |
RF & MICROWAVE TRANSISTORS |
|
| 5 | MS1404 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS |
|
| 6 | MS14046 |
Vishay |
Inductors |
|
| 7 | MS14052 |
Gowanda Electronics |
RF Molded Chokes |
|
| 8 | MS1408 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS |
|
| 9 | MS1409 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS |
|
| 10 | MS14 |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 11 | MS14103 |
ETC |
Bearing |
|
| 12 | MS141A |
Micro Electronics |
0.4 SINGLE DIGIT NUMERIC DISPLAYS |
|