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MRF557G |
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| Part Number | MRF557G |
| Manufacturer | Advanced Power Technology |
| Description | Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Volt... |
| Features |
• Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60% (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Improved Solderability MRF557 MRF557G * G Denotes RoHS Compliant, Pb Free Terminal Finish Power Macro DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Value 16 30 3.0 500 Unit Vdc Vdc Vdc mA Th... |
| Document |
 MRF557G Data Sheet
PDF 146.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MRF557 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 2 | MRF553 |
Motorola |
NPN SILICON RF LOW POWER TRANSISTOR |
|
| 3 | MRF553 |
ASI |
NPN SILICON RF TRANSISTOR |
|
| 4 | MRF553 |
Advanced Power Technology |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 5 | MRF553 |
Microsemi |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|