Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 70 100 3.0 4.
•
•
•
• Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz
1. Emitter 2. Base 3. Collector
TO-39
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Cur.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MRF544 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
|
| 2 | MRF5003 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |
|
| 3 | MRF5007 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |
|
| 4 | MRF5007R1 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |
|
| 5 | MRF501 |
Motorola Semiconductor |
(MRF501 / MRF502) High Frequency Transistors |
|
| 6 | MRF5015 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |
|
| 7 | MRF502 |
Motorola Semiconductor |
(MRF501 / MRF502) High Frequency Transistors |
|
| 8 | MRF5035 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET |
|
| 9 | MRF511 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 10 | MRF515 |
Motorola |
High Frequency Transistor |
|
| 11 | MRF517 |
Motorola |
HIGH FREQUENCY TRANSISTOR |
|
| 12 | MRF517 |
ASI |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|