Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 70 100 3.0 4.
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• Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz
1. Emitter 2. Base 3. Collector
TO-39
DESCRIPTION:
Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MRF545 |
Microsemi Corporation |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
2 | MRF5003 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
3 | MRF5007 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
4 | MRF5007R1 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
5 | MRF501 |
Motorola Semiconductor |
(MRF501 / MRF502) High Frequency Transistors | |
6 | MRF5015 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
7 | MRF502 |
Motorola Semiconductor |
(MRF501 / MRF502) High Frequency Transistors | |
8 | MRF5035 |
Motorola |
N-CHANNEL BROADBAND RF POWER FET | |
9 | MRF511 |
Motorola |
HIGH FREQUENCY TRANSISTOR | |
10 | MRF515 |
Motorola |
High Frequency Transistor | |
11 | MRF517 |
Motorola |
HIGH FREQUENCY TRANSISTOR | |
12 | MRF517 |
ASI |
NPN SILICON HIGH FREQUENCY TRANSISTOR |