MRF5035 - Motorola

MRF5035 N-CHANNEL BROADBAND RF POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5035/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier appli.

Features

XIMUM RATINGS Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1 MΩ) Gate
  –Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Symbol Min Typ Value 36 36 ± 20 15 97 0.56
  – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 1.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Max Unit OFF CHARACTERISTICS Drain
  –Source Break.