MRF1090MB - Tyco

MRF1090MB MICROWAVE POWER TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1090MB/D The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100% Tested for Load Mismatch at All Pha.

Features

to Case (3) Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Collector
  –Base Breakdown Voltage (IC = 25 mAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 70 70 4.0 — — — — — — — — 5.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (4) (IC = 2.5 Adc, VCE = 5.0 Vdc) hFE 10 30 — — NOTES: (continued) 1. Pulse Width = 10 µs, Duty Cycl.