MRF1090Mx - Motorola

MRF1090Mx MICROWAVE POWER TRANSISTORS

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1090MA/D Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100% Tested for Load Mismatch .

Features

50 Unit Vdc Vdc Adc Watts W/°C °C CASE 332
  –04, STYLE 1 (MRF1090MA) CASE 332A
  –03, STYLE 1 (MRF1090MB) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.6 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector
  –Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Collector
  –Base Breakdown Voltage (IC = 25 mAdc, IE = 0) Emitter
  –Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO ICBO 70 70 4.0 — .