MMG3014NT1 - Freescale Semiconductor

MMG3014NT1 Heterojunction Bipolar Transistor

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 2 123 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD22--A113, I.

Features

 Frequency: 40--4000 MHz
 P1dB: 25 dBm @ 900 MHz
 Small--Signal Gain: 19.5 dB @ 900 MHz
 Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
 Single 5 V Supply
 Active Bias
 Cost--effective SOT--89 Surface Mount Plastic Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3014NT1 Rev. 5, 3/2016 MMG3014NT1 40--4000 MHz, 19.5 dB 25 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1) Characteristic 900 2140 3500 Symbol MHz MHz MHz Unit Small--Signal Gain (S21) Gp 19.5 15 10 dB Input Return Loss (S11) IRL --25 --12 --8 .