MMG3003NT1 - Freescale Semiconductor

MMG3003NT1 Heterojunction Bipolar Transistor

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 2 123 Fig.

Features

 Frequency: 40--3600 MHz
 P1dB: 24 dBm @ 900 MHz
 Small--Signal Gain: 20 dB @ 900 MHz
 Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
 Single Voltage Supply
 Internally Matched to 50 Ohms
 Cost--effective SOT--89 Surface Mount Plastic Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3003NT1 Rev. 9, 9/2014 MMG3003NT1 40--3600 MHz, 20 dB 24 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1) Characteristic 900 2140 3500 Symbol MHz MHz MHz Unit Small--Signal Gain (S21) Gp 20 16.9 12 dB Input Return Loss (S11) I.