MMG3012NT1 - Freescale Semiconductor

MMG3012NT1 Heterojunction Bipolar Transistor

Pin Number Pin Function 1 RFin 2 Ground 3 RFout/DC Supply Table 6. ESD Protection Characteristics Test Methodology Human Body Model (per JESD 22--A114) Machine Model (per EIA/JESD 22--A115) Charge Device Model (per JESD 22--C101) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 2 123 Figure 1. Functional Di.

Features

 Frequency: 0--6000 MHz
 P1dB: 18.5 dBm @ 900 MHz
 Small--Signal Gain: 19 dB @ 900 MHz
 Third Order Output Intercept Point: 34 dBm @ 900 MHz
 Single 5 V Supply
 Internally Matched to 50 Ohms
 Cost--effective SOT--89 Surface Mount Plastic Package
 In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3012NT1 Rev. 8, 9/2014 MMG3012NT1 0--6000 MHz, 19 dB 18.5 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1) Characteristic 900 2140 Symbol MHz MHz Small--Signal Gain (S21) Gp 19 15.8 Input Return Loss (S11) IRL --18 --20 Output Retu.