MMG3006NT1 - Freescale Semiconductor

MMG3006NT1 Heterojunction Bipolar Transistor

Name Pin Number Description VBA RFin 1 2, 3, 4 Bias voltage supply. RF input for the power amplifier. This pin is DC--coupled and requires a DC--blocking series capacitor. RFout/ VCC VCC GND 9, 10, 11, 12 16 Backside Center Metal RF output for the power amplifier. This pin is DC--coupled and requires a DC--blocking series capacitor. Collector voltag.

Features

 Frequency: 400--2400 MHz
 P1dB: 33 dBm @ 900 MHz
 Small--signal gain: 17.5 dB @ 900 MHz
 Third order output intercept point: 49 dBm @ 900 MHz
 Single 5 V supply
 Internally input prematched to 50 ohms Document Number: MMG3006NT1 Rev. 6, 12/2017 MMG3006NT1 400--2400 MHz, 17.5 dB 33 dBm InGaP HBT GPA QFN 4  4--16L Table 1. Typical Performance (1) Characteristic 900 1960 2140 Symbol MHz MHz MHz Unit Small--Signal Gain (S21) Gp 17.5 14 14 dB Input Return Loss (S11) IRL --8 --9 --12 dB Output Return Loss (S22) ORL --13 --14 --18 dB Power Output @1dB Compression P1db 33 33 33 d.