MMFT960T1 - Motorola

MMFT960T1 MEDIUM POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT960T1/D Medium Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dc–dc converters, solenoid and re.

Features

2 3 CASE 318E
  –04, STYLE 3 TO
  –261AA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –to
  –Source Voltage Gate
  –to
  –Source Voltage — Non
  –Repetitive Drain Current Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg Value 60 ± 30 300 0.8 6.4
  – 65 to 150 Unit Volts Volts mAdc Watts mW/°C °C DEVICE MARKING FT960 THERMAL CHARACTERISTICS Thermal Resistance — Junction
  –to
  –Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec 1. Device mounted on a FR
  –4 glass epoxy p.